Prof. Dr. Gernot Paasch

Department:IFF - Electronical and Optical Properties
Position:Retired, guest-scientist
Address:IFW Dresden
Helmholtzstraße 20
01069 Dresden
Telephone number:+49-351-4659-763
E-mail:G.Paasch(at)ifw-dresden.de



 

Degrees

  • Diplom-Physiker (1967, Technical University Dresden)

  • Dr. rer. nat. (1970,Technical University Dresden)

  • Dr. sc. nat. (1976; converted into Dr. rer. nat. habil. 1991, Technical University Dresden)

Where I have been

  • Technical University Dresden (1967-1977)

  • Lomonossov Moscow State University and Institute of Physical Problems Moscow (Postdoc with Prof. M.I. Kaganov, Group of I.M.Lifshiz, 1974-1975)

  • Martin- Luther- University Halle- Wittenberg, Dozent (1977-1979)

  • Technical University Ilmenau, full Professor for Theoretical Physics (1979-1987)

  • Institute of Solid State and Materials Research (since 1988) (formerly Zentralinstitut für Festkörper- und Werkstofforschung), senior scientist, with research Groups Conducting Polymers, Electrochemistry and Conducting Polymers, now with the Group for Theoretical Solid State Physics

  • Technical University Ilmenau, Guest Professor for Nanoelectronics 1996-1998

My research

Since 1967 I have been working on different problems of solid state theory. My current interests are mainly

  • Conjugated (conducting) polymers: Transport properties, organic devices as organic LED and OFET, systems with polarons and bipolarons as charged states, space charge layers

  • The work on OFET is part of the Schwerpunktprogramm 1121 "Organische Feldeffekt-Transistoren" of the Deutsche Forschungsgemeinschaft, this work is coordinated within the institute within a common project "Polymerelectronics" whith the Dunsch group (OFET on the basis of C60) and the Knupfer group (spectroscopic investigation of interfaces in OFETs). There is also a close connection to other Groups

  • OFET: An organic FET with nonlithographically defined SUBMICROMETER channel length, see # 227. of the list of recent publications

  • Electrochemical impedance spectroscopy and cyclic voltammograms of conducting polymers

  • Other low dimensional systems as charge density wave conductors (transport)

  • Plasmon dispersion in special low dimensional systems (direct determination of band structure data)

  • Microelectronics: Deep submicron scaling of MOSFETs and vertical FETs, non-volatile memories, SOI

I am cooperating at present closely with collegues from the Technical University Ilmenau, University Bayreuth, Institute of Physics Prague of the Academy of Sciences of the Czech Republic, A.N. Frumkin Institute of Electrochemistry RAS Moscow, common research in the last years with DECHEMA Frankfurt, TU Dresden, University Jena, University College London and many others

Publications

  • I am author or coauthor of about 230 scientific publications in journals and in proceedings of conferences. The complete list is available on request (g.paasch(at)ifw-dresden.de).

  • I am coauther of the book ‘Ergebnisse in der Elektronentheorie der Metalle’ (Eds. P. Ziesche and G. Lehmann), Springer 1983 (a russian translation has been published by Mir Moscow, 1984)

  • I have been the supervisor of the research of 18 PhD students at the Technical University Dresden, the University Halle and the Technical University Ilmenau

Research Grants (since1992)

  • More than 10 grants from the Deutsche Forschungsgemeinschaft

  • Grants from BMBF for industrial research of BASF and of SIEMENS/INFINEON

  • from the DAAD/British Council

Journal papers:71
Contributions to collected editions/proceedings:22
Invited talks:38

Journal papers

2014

S. Scheinert, G. Paasch: Influence of the carrier density in disordered organics with Gaussian density of states on organic field-effect transistors, Journal of Applied Physics 115 (2014) Nr. 4, S. 44507/1-8 URL

2013

O. Penzin, G. Paasch, L. Smith: Nonparabolic multivalley quantum correction model for InGaAs double-gate structures, IEEE Transactions on Electron Devices 60 (2013) Nr. 7, S. 2246-2250 URL

S. Scheinert, M. Grobosch, J. Sprogies, I. Hoerselmann, M. Knupfer, G. Paasch: Organic [6,6] -phenyl-C61-butyric-acid-methyl-ester field effect transistors: Analysis of the contact properties by combined photoemission spectroscopy and electrical measurements, Journal of Applied Physics 113 (2013) Nr. 17, S. 174504/1-10 URL

2012

S. Scheinert, M. Grobosch, G. Paasch, I. Hoerselmann, M. Knupfer, J. Bartsch: Contact characterization by photoemission and device performance in P3HT based organic transistors, Journal of Applied Physics 111 (2012) Nr. 6, S. 64502/1-10 URL

2011

O. Penzin, G. Paasch, F. O. Heinz, L. Smith: Extended quantum correction model applied to six-band valence bands near silicon/oxide interfaces, IEEE Transactions on Electron Devices 58 (2011) Nr. 6, S. 1614-1619 URL

2010

G. Paasch, S. Scheinert: Charge carrier density of organics with Gaussian density of states: Analytical approximation for the Gauss–Fermi integral , Journal of Applied Physics 107 (2010) Nr. 10, S. 104501/1-4 URL

2009

G. Paasch, B.M. Grafov: Thermodynamics of interface elasticity, Russian Journal of Electrochemistry (Elektrokhimiya) 45 (2009) Nr. 1, S. 73-80

G. Paasch, S. Scheinert: Space-charge-limited currents in organics with trap distributions: Analytical approximations versus numerical simulation, Journal of Applied Physics 106 (2009) Nr. 8, S. 84502/1-9 URL

S. Scheinert, G. Paasch: Interdependence of contact properties and field- and density-dependent mobility in organic field-effect transistors, Journal of Applied Physics 105 (2009) Nr. 1, S. 14509/1-9 URL

2008

G. Paasch, S. Scheinert, A. Herasimovich, I. Hoerselmann, T. Lindner: Characteristics and mechanisms of hysteresis in polymer field-effect transistors, Physica Status Solidi A 205 (2008) Nr. 3, S. 534-548 URL

2007

T. Lindner, G. Paasch: Inversion layer formation in organic field-effect devices, Journal of Applied Physics 102 (2007) Nr. 5, S. 54514/1-12 URL

T. Lindner, G. Paasch, S. Scheinert: Operation and properties of ambipolar organic heterostructure field-effect transistors, Journal of Applied Physics 101 (2007) Nr. 1, S. 14502/1-10 URL

M.M. Mandoc, B. de Boer, G. Paasch, P.W.M. Blom: Trap-limited electron transport in disordered semiconducting polymers, Physical Review B 75 (2007) Nr. 19, S. 193202/1- 4 URL

G. Paasch, S. Scheinert: Space charge layers in organic field-effect transistors with Gaussian or exponential semiconductor density of states, Journal of Applied Physics 101 (2007) Nr. 2, S. 24514/1-13 URL

G. Paasch: Transport and reactions in doped conjugated polymers: Electrochemical processes and organic devices, Journal of Electroanalytical Chemistry 600 (2007) Nr. 1, S. 131-141 URL

L. Ruppel, A. Birkner, G. Witte, C. Busse, T. Lindner, G. Paasch, C. Woell: A defect-free thin film pentacene diode: Interplay between transport and scanning tunneling microscope tip tunneling injection, Journal of Applied Physics 102 (2007) Nr. 3, S. 33708/1-5 URL

S. Scheinert, K.P. Pernstich, B. Batlogg, G. Paasch: Determination of trap distributions from current characteristics of pentacene field-effect transistors with surface modified gate oxide, Journal of Applied Physics 102 (2007) Nr. 10, S. 104503/1-8 URL

2006

B.M. Grafov, G. Paasch: Alternative reference system in the thermodynamics of solid elastic electrodes, Journal of Solid State Electrochemistry 10 (2006) Nr. 9, S. 696-699 URL

G. Paasch, S. Scheinert, A. Petr, L. Dunsch: Bipolarons or polaron pairs in conducting polymers: equilibrium and kinetics, Russian Journal of Electrochemistry 42 (2006) Nr. 11, S. 1161-1168

2005

B.M. Grafov, G. Paasch: Method for thermodynamic description of an elastically deformed electrode, based on relating its extensive surface characteristics to a strainless electrode, Russian Journal of Electrochemistry 41 (2005) Nr. 8, S. 885-887

M. Knupfer, G. Paasch: Origin of the interface dipole at interfaces between undoped organic semiconductors and metals, Journal of Vacuum Science and Technology A 23 (2005) Nr. 4, S. 1072-1074 URL

T. Lindner, G. Paasch, S. Scheinert: Hysteresis in organic field-effect devices: Simulated effects due to trap recharging, Journal of Applied Physics 98 (2005) Nr. 11, S. 114505/1-9 URL

T. Lindner, G. Paasch, S. Scheinert: Simulated operation and properties of source-gated thin-film transistors, IEEE Transactions on Electron Devices 52 (2005) Nr. 1, S. 47-55

G. Paasch, T. Lindner, C. Rost-Bietsch, S. Karg, W. Riess, S. Scheinert: Operation and properties of ambipolar organic field-effect transistors, Journal of Applied Physics 98 (2005) Nr. 8, S. 84505/1-13 URL

S. Scheinert, G. Paasch, I. Hoerselmann, A. Herasimovich: Influence of source/drain contacts on sub-micrometer organic field-effect transistors, Physica Status Solidi A 202 (2005) Nr. 8, S. R82-R84 URL

2004

T. Lindner, G. Paasch, S. Scheinert: Influence of distributed trap states on the characteristics of top and bottom contact organic field-effect transistors , Journal of Materials Research 19 (2004) Nr. 7, S. 2014-2027 URL

G. Paasch: Transport in doped conjugated polymers with polarons and bipolarons forming complexes with counter ions, Solid State Ionics 169 (2004), S. 87-94 URL

G. Paasch, S. Scheinert: Scaling organic transistors: materials and design, Materials Science - Poland 22 (2004) Nr. 4, S. 423-434

S. Scheinert, G. Paasch: Fabrication and analysis of polymer field-effect transistors, Physica Status Solidi A 201 (2004) Nr. 6, S. 1263-1301 URL

S. Scheinert, T. Doll, A. Scherer, G. Paasch, I. Hoerselmann: Organic field-effect transistors with nonlithographically defined submicrometer channel length, Applied Physics Letters 84 (2004) Nr. 22, S. 4427-4429 URL

2003

S.-L. Drechsler, H. Rosner, G. Paasch, J. Malek, H. Eschrig: Analysis of possible field-induced superconductivity in anthracene, other polyacenes, and C-60, Journal of Low Temperature Physics 131 (2003) Nr. 5-6, S. 1245-1249 URL

B.M. Grafov, G. Paasch, W. Plieth, A. Bund: Connection of the generalized Shuttleworth equation for the elastic spherical electrode with the Laplace formula and the Gibbs adsorption equation , Electrochimica Acta 48 (2003) Nr. 5, S. 581-587 URL

P.H. Nguyen, K.R. Hofmann, G. Paasch: Comparative full-band Monte Carlo study of Si and Ge with screened pseudopotential-based phonon scattering rates, Journal of Applied Physics 94 (2003) Nr. 1, S. 375-386 URL

G. Paasch, S. Scheinert: Transport and complex formation kinetics of polarons, dopands and bipolarons, Synthetic Metals 135-136 (2003), S. 407-408 URL

G. Paasch, H. Peisert, M. Knupfer, J. Fink, S. Scheinert: Mixing of interface dipole and band bending at organic/metal interfaces in the case of exponentially distributed transport states, Journal of Applied Physics 93 (2003) Nr. 10, S. 6084-6089 URL

G. Paasch, A. Nesterov, S. Scheinert: Simulation of organic light emitting diodes: influence of charges localized near the electrodes, Synthetic Metals 139 (2003) Nr. 2, S. 425-432 URL

S. Scheinert, G. Paasch, T. Lindner: Relevance of organic field effect transistor models: simulation vs. experiment, Synthetic Metals 137 (2003) Nr. 1-3, S. 1451-1452 URL

S. Scheinert, G. Paasch, T. Doll: The infuence of bulk traps on the subthreshold characteristics of an organic field effect transistor, Synthetic Metals 139 (2003) Nr. 2, S. 233-237 URL

2002

S.-L. Drechsler, G. Paasch, J. Malek, S.V. Shulga, H. Eschrig, H. Rosner: Theoretical aspects of the field induced superconductivity in polyacenes and C-60, International Journal of Modern Physics B 16 (2002) Nr. 11-12, S. 1547-1551

A. Nesterov, G. Paasch, S. Scheinert, T. Lindner: Simulation study of the influence of polymer modified anodes on organic LED performance, Synthetic Metals 130 (2002) Nr. 2, S. 165-175 URL

P.H. Nguyen, K.R. Hofmann, G. Paasch: Full-band Monte Carlo model with screened pseudopotential based phonon scattering rates for a lattice with basis, Journal of Applied Physics 92 (2002) Nr. 9, S. 5359-5370 URL

G. Paasch, T. Lindner, S. Scheinert: Variable range hopping as possible origin of a universal relation between conductivity and mobility in disordered organic semiconductors, Synthetic Metals 132 (2002) Nr. 1, S. 97-104 URL

G. Paasch: Transmission line description for doped conjugated polymers with polarons, bipolarons and counterions as charged species, Electrochimica Acta 47 (2002) Nr. 13-14, S. 2049-2053 URL

S. Scheinert, G. Paasch, M. Schroedner, H.-K. Roth, S. Sensfuss, Th. Doll: Subthreshold characteristics of field effect transistors based on poly(3-dodecylthiophene) and an organic insulator, Journal of Applied Physics 92 (2002) Nr. 1, S. 330-337 URL

2001

S. Berleb, W. Bruetting, G. Paasch: Interfacial charges in organic hetero-layer light emitting diodes probed by capacitance-voltage measurements, Synthetic Metals 122 (2001) Nr. 1, S. 37-39 URL

S.-L. Drechsler, G. Paasch, J. Málek: Conjugated polymers in a strong longitudinal electric field, Synthetic Metals 119 (2001) Nr. 1-3, S. 255-256 URL

P.H. Nguyen, G. Paasch: Influence of bipolaron lattice formation on CV, ESR and EQCM at finite rate constants, Synthetic Metals 119 (2001) Nr. 1-3, S. 341-342 URL

P.H. Nguyen, S. Scheinert, S. Berleb, W. Bruetting, G. Paasch: The influence of deep traps on transient current-voltage characteristics of organic light-emitting diodes, Organic Electronics 2 (2001), S. 105-120 URL

G. Paasch, S. Scheinert: Simulation and modeling of C-V curves of OLEDS with trap states for the holes, Synthetic Metals 122 (2001) Nr. 1, S. 145-147 URL

G. Paasch: Complete electrochemical transmission line model for conducting polymers, Synthetic Metals 119 (2001) Nr. 1-3, S. 233-234 URL

2000

S. Berleb, W. Bruetting, G. Paasch: Interfacial charges and electric field distribution in organic hetero-layer light emitting devices, Organic Electronics 1 (2000) Nr. 1, S. 41-47

G. Paasch, P.H. Nguyen, S.-L. Drechsler: Screening by space charge layers and self-localization in conjugated polymers, Synthetic Metals 111-112 (2000), S. 321-325 URL

G. Paasch: The transmission line equivalent circuit model in solid-state electrochemistry, Electrochemistry Communications 2 (2000) Nr. 5, S. 371-375

G. Paasch, P.H. Nguyen: Connection of the electrochemical impedance of conducting polymers with CV and other experiments, Acta Chimica Hungarica - Models in Chemistry 137 (2000) Nr. 2-3, S. 299-323

S. Scheinert, G. Paasch, S. Pohlmann, H.-H. Hoerhold, R. Stockmann: Field effect in organic devices with solution-doped arylamino-poly-(phenylene-vinylene), Solid-State Electronics 44 (2000) Nr. 5, S. 845-853

1999

S.-L. Drechsler, J. Malek, G. Paasch, K. Hallberg: Dimerization problem in conjugated polymers, Synthetic Metals 101 (1999) Nr. 1-3, S. 386-387 URL

V.G. Grigoryan, G. Paasch, S.L. Drechsler: Determination of an effective one-electron spectrum from the plasmon dispersion of nearly optimally doped Bi2Sr2CaCu2O8, Physical Review B 60 (1999) Nr. 2, S. 1340-1348 URL

P.H. Nguyen, G. Paasch: Transfer matrix method for the electrochemical impedance of inhomogeneous porous electrodes and membranes, Journal of Electroanalytical Chemistry 460 (1999) Nr. 1-2, S. 63-79

G. Paasch, V.G. Grigoryan: Quasi-classical theory of the alkali metal plasmon dispersion, Ukrainskij fiziceskij zurnal 44 (1999) Nr. 12, S. 1480-1487

G. Paasch, P.H. Nguyen, S.L. Drechsler, J. Malek: Equilibrium theory of space charge layers in conjugated polymers II. The transition to high densities, Synthetic Metals 104 (1999) Nr. 3, S. 197-209 URL

M. Sing, V.G. Grigoryan, G. Paasch, M. Knupfer, J. Fink, B. Lommel, W. Assmus: Plasmon excitations in quasi-one-dimensional K0.3MoO3, Physical Review B 59 (1999) Nr. 8, S. 5414-5425 URL

M. Sing, V.G. Grigoryan, G. Paasch, M. Knupfer, J. Fink: Plasmon dispersion in quasi-one-dimensional (TaSe4)2I and K0.3MoO3, Synthetic Metals 102 (1999) Nr. 1-3, S. 1591-1594 URL

1998

C. Ehrenbeck, K. Juettner, S. Ludwig, G. Paasch: The electrochemical impedance of a free-standing polypyrrole membrane, Electrochimica Acta 43 (1998) Nr. 19-20, S. 2781-2789 URL

G. Paasch, P.H. Nguyen, S.-L. Drechsler: Equilibrium theory of space charge layers in conjugated polymers. I. Non-degenerate limit, Synthetic Metals 97 (1998) Nr. 3, S. 255-265 URL

G. Paasch, P.H. Nguyen, A.J. Fisher: Potential dependence of polaron and bipolaron densities in conducting polymers: theoretical description beyond the Nernst equations, Chemical Physics 227 (1998) Nr. 1-2, S. 219-241

K. Rossberg, G. Paasch, L. Dunsch, S. Ludwig: The influence of porosity and the nature of the charge storage capacitance on the impedance behaviour of electropolymerized polyaniline films, Journal of Electroanalytical Chemistry 443 (1998) Nr. 1, S. 49-62

J. Scherbel, P.H. Nguyen, G. Paasch, W. Bruetting, M. Schwoerer: Temperature dependent broadband impedance spectroscopy on poly-(p-phenylene-vinylene) light-emitting diodes, Journal of Applied Physics 83 (1998) Nr. 10, S. 5045-5055 URL

M. Sing, V.G. Grigoryan, G. Paasch, M. Knupfer, J. Fink, H. Berger, F. Lévy: Unusual plasmon dispersion in the quasi-one-dimensional conductor (TaSe4)2I: Experiment and theory, Physical Review B 57 (1998) Nr. 20, S. 12768-12771 URL

R. Tecklenburg, G. Paasch, S. Scheinert: Theory of organic-field effect transistors, Advanced Materials for Optics and Electronics 8 (1998) Nr. 6, S. 285-294

1997

J. Malek, S.-L. Drechsler, G. Paasch, K. Hallberg: Solitonic approach to the dimerization problem in correlated one-dimensional systems, Physical Review B 56 (1997) Nr. 14, S. R8467-R8470 URL

G. Paasch, P.H. Nguyen: Impedance of inhomogeneous porous electrodes. A novel transfer matrix calculation method, Electrochemical Applications (1997) Nr. 1, S. 7-9

Contributions to collected editions/proceedings

2010

S. Scheinert, G. Paasch, I. Hoerselmann, A. Herasimovich: Low-cost submicrometer organic field-effect transistors, in: Organic Electronics; Gregor Meller, Tibor Grasser (Volumen-eds.), Serie: Advances in Polymer Science, Springer-Verl., 2010, 223, 155-188 (2010)

2009

G. Paasch, S. Scheinert, A. Herasimovich, I. Hoerselmann, T. Lindner: Characteristics and mechanisms of hysteresis in polymer field-effect transistors, in: Organic Electronic - Structural and electronic properties of OFETs, Christof Woell (ed.), Wiley-VCH, 2009, 317-346 (2009)

2005

S. Scheinert, G. Paasch: Fabrication and analysis of polymer field-effect transistors, in: Physics of Organic Semiconductors, W. Bruetting (ed.); Wiley-VCH, 2005, 343-391 (2005)

2003

T. Lindner, G. Paasch, S. Scheinert: Application of the amorphous silicon model to organic field effect transistors, 48. Internationales Wissenschaftliches Kolloquium der Technischen Universitaet Ilmenau, 22.-25.9.03, in: Proceedings, 241-242 (2003)

G. Paasch, S. Scheinert, T. Doll: Designing organic field effect transistors, 48. Internationales Wissenschaftliches Kolloquium der Technischen Universitaet Ilmenau, 22.-25.9.03, in: Proceedings, 237-238 (2003)

S. Scheinert, G. Paasch, A. Herasimovich, I. Hoerselmann, M. Scheinert: Experimental characterization and simulation of P3OT-based field effect devices, 48. Internationales Wissenschaftliches Kolloquium der Technischen Universitaet Ilmenau, 22.-25.9.03, in: Proceedings, 239-240 (2003)

2000

S. Scheinert, G. Paasch, P.H. Nguyen, S. Berleb, W. Bruetting: Transient I-V-characteristics of OLEDs with deep traps, 30th European Solid-State Device Research Conference, Cork/Irland, 11.-13.9.00, in: Proceedings "ESSDERC 2000", 445-447 (2000)

1999

S. Scheinert, G. Paasch, S. Pohlmann, H.-H. Hoerhold, R. Stockmann: Field effect in organic devices based on solution-doped PPV, 29th European Solid-State Device Research Conference, Leuven/Belgien, 13.-15.9.99, in: Proceedings ESSDERC'99, 704-707 (1999)

1998

H. Mau, D. Nuernbergk, F. Schwierz, M. Rossberg, G. Paasch, D. Schipanski: Dependence of the cut off frequency on Ge profiles, base and collector widths in SiGe HBTs, in: Proceedings of the 1998 Second IEEE International Caracas Conference on Devices, Circuits and Systems, Isla de Margarita, Venezuela, 2.-4.3.1998, 33-36 (1998)

D.M. Nuernbergk, H. Foerster, F. Schwierz, J.S. Yuan, G. Paasch: On the temperature behavior of Si/SiGe/Si-HBT: Comparison between measurements and numerical simulation, in: Proceedings of the 1998 Second IEEE International Caracas Conference on Devices, Circuits and Systems, Isla de Margarita, Venezuela, 2.-4.3.1998, 37-41 (1998)

G. Paasch, S. Scheinert, M. Kittler: Simulated scaling of short channel vertical MOSFETs, 43. Internationales Wissenschaftliches Kolloquium, Technische Universitaet Ilmenau, 21.-24.9.98, in: Tagungsband, 293-298 (1998)

M. Rave, A. Schueppen, F. Schwierz, G. Paasch, D. Schipanski: Simulationen zur Technologieoptimierung des SiGe-HBT, 43. Internationales Wissenschaftliches Kolloquium, Technische Universitaet Ilmenau, 21.-24.9.98, in: Tagungsband, 337-342 (1998)

M. Roschke, F. Schwierz, G. Paasch, D. Schipanski: Evaluating the three common SiC polytypes for MESFET applications, Silicon Carbide, III-Nitrides and Related Materials, 7.Int. Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sept. 1997, in: Materials Science Forum, 264-268, 965-968 (1998)

S. Scheinert, G. Paasch, R. Tecklenburg: Organic FET current characteristics: Extraction of unusual field dependences of hopping mobilities, ESSDERC'98, Bordeaux/Frankreich, 8.-10.9.98, in: Proceedings, 628-631 (1998)

S. Scheinert, G. Paasch, R. Tecklenburg, D. Schipanski: A novel method to determine field dependencies of mobilities from MOSFET current characteristics, 43. Internationales Wissenschaftliches Kolloquium, Technische Universitaet Ilmenau, 21.-24.9.98, in: Tagungsband, 305-310 (1998)

S. Scheinert, G. Paasch, M. Kittler, D. Nuernbergk, H. Mau, F. Schwierz: Requirements and restrictions in optimizing homogeneous and planar doped barrier vertical MOSFETS, in: Proceedings of the 1998 Second IEEE International Caracas Conference on Devices, Circuits and Systems, Isla de Margarita, Venezuela, 2.-4.3.1998, 55-58 (1998)

F. Schwierz, M. Roschke, J.J. Liou, G. Paasch: Theoretical investigation of the electrical behavior of SiC MESFETs for microwave power amplification, Silicon Carbide, III-Nitrides and Related Materials, 7. Int. Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sept. 1997, in: Materials Science Forum , 264-268, 973-976 (1998)

1997

D.M. Nuernbergk, H. Foerster, F. Schwierz, J.S. Yuan, G. Paasch: Comparison of Monte Carlo, energy transport, and drift-diffusion simulations for a Si/SiGe/Si HBT, Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, London/UK, 24.-25.11.97, in: Proceedings , 19-24 (1997)

G. Paasch: Plasmondispersion, Seminar des Institutes fuer Physik der TU Ilmenau, 17.6.1997 (1997)

G. Paasch, S. Scheinert, R. Tecklenburg: Theory and modelling of organic field effect transistors, ESSDERC'97, Paris/Frankreich, in: Proceedings, Edition Frontiers, 636-639 (1997)

1996

W. Bruetting, W. Riess, P.H. Nguyen, G. Paasch: Charge density wave transport in quasi-one-dimensional semiconductors, in: The Physics of Semiconductors, World Scientific Singapore, 4, 3363-3366 (1996)

K. Rossberg, L. Dunsch, G. Paasch, S. Ludwig: Impedanzspektroskopie an Polyanilin-Schichten und ihre Auswertung mit einer Theorie makroskopisch homogener Elektroden, in: Beck, F.(ed.) Elektrochemie der Elektronenleiter, GDCh, Frankfurt/M., 3, 587-596 (1996)

Invited talks

2012

G. Paasch, S. Scheinert, M. Grobosch, I. Hoerselmann, M. Knupfer, J. Bartsch: The influence of hole injection barriers on organic on organic field-effect transistors: connection with photoemission data, 5th International Symposium Technologies for Polymer Electronics TPE 12, Rudolstadt, 22.-24.5.12 (2012)

G. Paasch, S. Scheinert: Contact barrier and band edge in disordered organics, Seminar der Molecular Electronics Group, Universitaet Groningen/ Netherlands, 29.6.12 (2012)

G. Paasch, S. Scheinert: Problems with the Gaussian Density of states in organics: definite solution, ambiguous, and hardly any solution, Workshop Mathematics for Semiconductor Heterostructures, Berlin, 24.-28.9.12 (2012)

2011

G. Paasch: The influence of gausslan disorder on the performance of organic devices, Seminar, Weierstrass-Institut Berlin, 1.12.11 (2011)

2009

G. Paasch, S. Scheinert, M. Grobosch, M. Knupfer: SCLC in organics with distributed traps: analytical approximations vs. numerical simulation and the role of the contacts, International Conference on Organic Electronics 2009, Liverpool/ GB, 15.-17.6.09 (2009)

2007

G. Paasch: Modelling of organic devices, Seminar an der TU Eindhoven/ Niederlande, 29.10.07 (2007)

2006

G. Paasch, T. Lindner, S. Scheinert: Organic ambipolar field-effect transistors, Seminar Technische Elektrophysik, TU Muenchen, 24.7.06 (2006)

G. Paasch, T. Lindner, S. Scheinert, I. Hoerselmann, A. Hoerselmann: Bipolareses mechanism for hysteresis in organic devices, Seminar Physik an der TU Chemnitz, 25.1.06 (2006)

2005

G. Paasch, S. Scheinert: Plastikelektronik, Symposium "Elektronisch leitende Kunststoffe", Technische Akademie Esslingen, 18.-19.4.05 (2005)

2004

G. Paasch, S. Scheinert: Interdependency of design and material properties of organic thin film transistors, Winter School on Organic Electronics, Planneralm/Oesterreich, 6.-12.3.04 (2004)

G. Paasch, S. Scheinert: Scaling organic transistors: materials and design, Conference "New Concepts and Materials for Molecular Electronics", CMME, Poznan/Polen, 11.-15.9.04 (2004)

G. Paasch, S. Scheinert, T. Lindner: Towards submicrometer organic CMDS, International Symposium Technologies for Polymer Electronics, TPE04, Rudolstadt, 28.-30.9.04 (2004)

2003

G. Paasch, S. Scheinert, T. Doll: Designing organic field effect transistors, 43.IWK, TU Ilmenau, 22.-25.9.03 (2003)

2002

G. Paasch: Organic devices and polymer electronics, Theorie-Seminar der Universitaet Halle, 8.5.02 (2002)

G. Paasch: Innere Elektronik organischer Leuchtdioden, SAMSUNG European Research Center, Berlin, 22.5.02 (2002)

2001

G. Paasch, S. Scheinert: The influence of the direct polaron-bipolaron reaction on the transport kinetics of organic semiconductors, European Conference on Organic Electronics, Potsdam, 18.-21.11.01 (2001)

G. Paasch: Polymerelektronik, Seminar am Institut fuer Physik und Institut fuer Festkoerperelektronik, TU Ilmenau, 8.3.01 (2001)

2000

W. Bruetting, S. Berleb, A. Mueckl, P.H. Nguyen, M. Schwoerer, S. Scheinert, G. Paasch: Device physics of organic single and hetero-layer light-emitting diodes, American Physical Society, Division of Materials Physics, March Meeting 2000, Minneapolis/USA, 20.-24.3.00 (2000)

G. Paasch: Drift, Diffusion und Einsteinbeziehung bei Hoppingleitung, Seminar Angewandte Photophysik, TU Dresden, 14.12.00 (2000)

1999

J. Fink, M. Sing, M. Kielwein, W. Grigoryan, G. Paasch, M. Knupfer, M.S. Golden: Collective electronic excitations in bronzes, German-French Workshop on Reduced Dimensionality and Electronic Correlations, Freiburg, 8.-11.6.99 (1999)

G. Paasch, P.H. Nguyen: Transmission line models for the electrochemical impedance of conducting polymers, Seminar des Frumkin-Instituts fuer Elektrochemie, Moskau/Russland, 7.12.99 (1999)

G. Paasch, P.H. Nguyen: Bipolaron lattice formation in conducting polymers modifies CV and related quantities, Seminar des Frumkin-Instituts fuer Elektrochemie, Moskau/Russland, 9.12.99 (1999)

G. Paasch, H. Nguyen: Connection of the impedance of conducting polymers with CV and other experiments, 5th International Symposium on Electrochemical Impedance Analysis, Balatonfoeldvar/Ungarn, 30.5.-4.6.99 (1999)

G. Paasch, P.H. Nguyen: Zusammenhang zwischen der elektrochemischen Impedanz konjugierter Polymere und CV und anderen Elementen, Kolloquium im Thueringer Institut fuer Textil- und Kunststofforschung Rudolstadt, 5.7.99 (1999)

G. Paasch: Organische Feldeffekt-Transistoren: Perspektiven und Probleme, Seminar der Experimentellen Physik II, Universitaet Bayreuth, 15.1.99 (1999)

S. Scheinert, G. Paasch, S. Pohlmann, R. Tecklenburg: Organische Feldeffekt-Transistoren, Seminar, Universitaet Bayreuth, 9.2.99 (1999)

S. Scheinert, G. Paasch, S. Pohlmann, H.H. Hoerhold, R. Stockmann: Field effect in organic devices, EMRS Spring Meeting, Strasbourg/Frankreich, 1.-4.6.99 (1999)

1998

P.H. Nguyen, G. Paasch: Transfer-Matrix-Methode fuer die elektrochemische Impedanz inhomogener poroeser Elektroden und Membranen, Elektrochemisches Seminar, DECHEMA, Frankfurt/M., 16.6.98 (1998)

G. Paasch, S. Scheinert: Non-mainstream MOSFET's: Skalierung vertikaler MOSFET's und organische Feldeffekttransistoren, Lehrstuhl fuer Technische Elektrophysik, TU Muenchen, 11.5.98 (1998)

G. Paasch: Impedanzspektroskopische Analyse von organischen Leuchtdioden, Seminar TU Dresden, Photophysik, 9.7.98 (1998)

G. Paasch, P.H. Nguyen: Gleichgewicht von Polaronen und Bipolaronen, Elektrochemisches Seminar, DECHEMA, Frankfurt/M., 16.6.98 (1998)

G. Paasch: Eigenschaften organischer Transistoren, DFG-Treffen "Organische Feldeffekt-Transistoren", Cottbus, 18.-20.11.98 (1998)

G. Paasch, S. Scheinert, M. Rave, R. Tecklenburg: Simulated scaling of non-volatile memories, Non-Volatile Memory MEDEA Workshop, Muenchen, 26.-27.11.98 (1998)

G. Paasch, S. Scheinert, M. Kittler: Simulated scaling of short channel vertical MOSFETs, 43rd Scientific Colloquium, Ilmenau, 21.-24.9.1998 (1998)

1997

G. Paasch: Skalierungs-Simulation vertikaler Nano-MOSFET's, Institut fuer Schicht- u. Ionentechnik, Forschungszentrum Juelich, 24.11.1997 (1997)

G. Paasch: Oxidation of conducting polymers, Kolloquium des Heyrovski-Institutes Prag, 30.5.1997 (1997)

G. Paasch: Zustandsgleichungen von Polaron-Bipolaron-Systemen, SFB-Kolloquium, Universitaet Bayreuth, 16.5.1997 (1997)

G. Paasch, P.H. Nguyen: Konjugierte Polymere mit Polaronen und Bipolaronen als Ladungszustaenden: Raumladungszonen und Redoxverhalten, DPG Fruehjahrstagung, Muenster, 17.-21.3.97 (1997)