2000
   
 54. O. G. Schmidt, K. Eberl, and Y. Rau
  Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands
  Physical Review B 62, 16715 (2000)
   
 53. K. Eberl, M. Lipinski, Y. M. Manz, N. Y. Jin-Phillipp, W. Winter, C. Lange, and O. G. Schmidt
  Self-assembling InAs and InP quantum dots for optoelectronic devices
  Thin Solid Films 380, 183 (2000)
   
 52. O. G. Schmidt, U. Denker, K. Eberl, O. Kienzle, F. Ernst, and R. J. Haug
  Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands
  Applied Physics Letters 77, 4341 (2000)
   
 51. O. G. Schmidt, N. Y. Jin-Phillipp, C. Lange, U. Denker, K. Eberl, R. Schreiner, H. Gräbeldinger, and H. Schweizer
  Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface
  Applied Physics Letters 77, 4139 (2000)
   
 50. J. Stangl, T. Roch, G. Bauer, I. Kegel, T. H. Metzger, O. G. Schmidt, K. Eberl, O. Kienzle, anf F. Ernst
  Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy
  Applied Physics Letters 77, 3953 (2000)
   
 49. K. Eberl, O. G. Schmidt, O. Kienzle, and F. Ernst
  Preparation and optical properties of Ge and C-induced Ge quantum dots on Si
  Thin Solid Films 373, 164 (2000)
   
 48. O. G. Schmidt, U. Denker, K. Eberl, O. Kienzle, and F. Ernst
  Effect of overgrowth temperature on the photoluminescence of Ge/Si islands
  Applied Physics Letters 77, 2509 (2000)
   
 47. M. Cazayous, J. R. Huntzinger, J. Groenen, A. Mlayah, S. Christiansen, H. P. Strunk, O. G. Schmidt, and K. Eberl
  Resonant Raman scattering by acoustical phonons in Ge/Si self-assembled quantum dots: Interferences and ordering effects
  Physical Review B 62, 7243 (2000)
   
 46. M. O. Lipinski, H. Schuler, O. G. Schmidt, K. Eberl, and N. Y. Jin-Phillipp
  Strain-induced material intermixing of InAs quantum dots in GaAs
  Applied Physics Letters 77, 1789 (2000)
   
 45. K. Eberl, O. G. Schmidt, R. Duschl, O. Kienzle, E. Ernst, and Y. Rau
  Self-assembling SiGe and SiGeC nanostructures for light emitters and tunneling diodes
  Thin Solid Films 369, 33 (2000)
   
 44. M. O. Lipinski, N. Y. Jin-Phillipp, O. G. Schmidt, and K. Eberl
  MBE growth conditions for 1.3 μm light emission from InAs quantum dots
  Proceedings of the 12th International Conference on InP and related materials 2000, p. 215
   
 43. R. Duschl, O. G. Schmidt, and K. Eberl
  Electronic properties of SiGeC alloys
  Emis Datareview Series No. 24 (INSPEC, London 2000), p. 158
   
 42. K. Eberl, O. G. Schmidt, and R. Duschl
  Structural properties of SiC and SiGeC alloy layers on Si
  Emis Datareview Series No. 24  (INSPEC, London 2000), p. 75
   
  41. R. Duschl, O. G. Schmidt, and K. Eberl
  Room temperature I-V characteristic of Si/SiGe/Si interband tunneling diodes
  Physica E 7, 836 (2000)
   
  40. Y. Manz, O. G. Schmidt, and K. Eberl
  Room temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots
  Applied Physics Letters 76, 3343 (2000)
   
 39. O. G. Schmidt and K. Eberl
  Multiple layers of self-assembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation
  Physical Review B 61, 13721 (2000)
   
 38. O. G. Schmidt, C. Lange, K. Eberl, O. Kienzle, F. Ernst, S. Christiansen, and H. P. Strunk
  Reduced critical thickness and photoluminescence line splitting in multiple layers of self-assembled Ge/Si islands
  Materials Science & Engineering B 74, 248 (2000)
   
 37. O. G. Schmidt and K. Eberl
  Photoluminescence of monolayer to submonolayer thick Ge1-zCz films in Si (001)
  Semiconductor Science and Technology 15, 399 (2000)
   
 36. Z. X. Liu, O. G. Schmidt, U. D. Venkateswaran, K. Eberl, and K. Syassen
  High pressure photoluminescence studies of carbon-induced germanium quantum dots grown on Si
  Semiconductor Science and Technology 15, 155 (2000)
   
 35. R. Duschl, O. G. Schmidt, and K. Eberl
  Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio
  Applied Physics Letters 76, 879 (2000)
   
 34. K. Eberl, O. G. Schmidt, O. Kienzle, and F. Ernst
  Preparation and optical properties of Ge and C-induced Ge quantum dots on Si
  Material Research Symposium Proceedings 571, 355 (2000)