2002
   
 103. O. G. Schmidt, Ch. Deneke, S. Kiravittaya, R. Songmuang, H. Heidemeyer, Y. Nakamura, R. Zapf-Gottwick, C. Müller, and N. Y. Jin-Phillipp
  Self-assembled nanoholes, lateral quantum-dot molecules, and rolled-up nanotubes
  IEEE Journal of Selected Topics in Quantum Electronics 8, 1025 (2002)
   
 102. C. Deneke, C. Müller, N. Y. Jin-Phillipp, and O. G. Schmidt
  Diameter scalability of rolled-up In(Ga)As nanotubes
  Semiconductor Science and Technology 17, 1278 (2002)
   
 101. O. G. Schmidt, U. Denker, S. Christiansen, and F. Ernst
  Composition of self-assembled Ge/Si islands in single and multiple layers
  Applied Physics Letters 81, 2614 (2002)
   
 100. Ch. Deneke, C. Müller, and O. G. Schmidt
  Rolled-up In(Ga)As/GaAs nanotubes: Diameter as a function of structural properties
  Materials Research Society Symposium Proceedings 728, 141 (2002)
   
 99. Y. M. Manz and O. G. Schmidt
  A comparative study of an InP quantum dot and a GaInP quantum well laser
  Materials Research Society Symposium Proceedings 722, 325 (2002)
   
 98. S. Kiravittaya, R. Songmuang, and O. G. Schmidt
  Self-assembled quantum dots and nanoholes by molecular beam epitaxial growth and atomically precise in situ etching
  Materials Research Society Symposium Proceedings 722, 311 (2002)
   
 97. A. Hesse, J. Stangl, V. Holy, T. Roch, G. Bauer, O. G. Schmidt, U. Denker, and B. Struth
  Effect of overgrowth on shape, composition, and strain of SiGe islands on Si (001)
  Physical Review B 66, 085321 (2002)
   
 96. O. G. Schmidt, Y. M. Manz, and K. Eberl
  InP/GaInP quantum dot lasers
  Nano-Optoelectronics: Concepts, physics, and devices, edited by M. Grundmann (Springer, Berlin, 2002), p. 339, ISBN: 3-540-43394-5
   
 95. O. G. Schmidt, S. Kiravittaya, Y. Nakamura, H. Heidemeyer, R. Songmuang, C. Müller, N. Y. Jin-Phillipp, K. Eberl, H. Wawra, S. Christiansen, H. Gräbeldinger, and H. Schweizer
  Self-assembled semiconductor nanostructures: Climbing up the ladder of order
  Surface Science 514, 10 (2002)
   
 94. O. G. Schmidt, Ch. Deneke, Y. Nakamura, R. Zapf-Gottwick, C. Müller, and N. Y. Jin-Phillipp
  Nanotechnology – Bottom-up meets top-down
  Advances in Solid State Physics 42, 231 (2002)
   
 93. O. G. Schmidt, R. Duschl, and K. Eberl
  Photoluminescence and Transport measurements in pseudomorphic Si1-yCy and Si1-x-yGexCy layers
  Silicon-Germanium Carbon alloys, edited by S. T. Pantelides and S. Zollner (Taylor & Francis, London, 2002), Volume 15, p. 445, ISBN: 1-56032-963-7
   
 92. Y. Nakamura, O. G. Schmidt, N. Y. Jin-Phillipp, S. Kiravittaya, C. Müller, K. Eberl, H. Gräbeldinger, and H. Schweizer
  Vertical alignment of laterally ordered InAs and InGaAs quantum dot arrays on patterned (001) GaAs substrates
  Journal of Crystal Growth 242, 339 (2002)
   
  91. M. Meduna, V. Holy, T. Roch, G. Bauer, O. G. Schmidt, and K. Eberl
  Diffuse x-ray reflectivity from self-assembled ripples with superimposed roughness in Si/Ge superlattices
  Semiconductor Science and Technology 17, 480 (2002)
   
  90. M. W. Dashiell, U. Denker, and O. G. Schmidt
  Influence of the Si-Ge interface on phononless radiative recombination in Ge hut clusters grown on Si (001)
  Physica E 13, 1030 (2002)
   
  89. M. Meduna, V. Holy, J. Stangl, A. Hesse, T. Roch, G. Bauer, O. G. Schmidt, and K. Eberl
  Non-specular x-ray reflection from self-organized ripple structures in Si/Ge multilayers
  Physica E 13, 1003 (2002)
   
  88. O. G. Schmidt, C. Deneke, Y. M. Manz, and C. Müller
  Semiconductor tubes, rods and rings of nanometer and micrometer dimension
  Physica E 13, 969 (2002)
   
  87. K.-M. Haendel, C. Lenz, U. Denker, O. G. Schmidt, K. Eberl, and R. J. Haug
  Transport measurements of valence band holes in p-type SiGe quantum well structure containing Ge quantum dots
  Physica E 13, 757 (2002)
   
  86. A. T. Winzer, R. Goldhahn, G. Gobsch, H. Heidemeyer, O. G. Schmidt, and K. Eberl
  Optical properties of wetting layers in stacked InAs/GaAs quantum dot structures
  Physica E 13, 289 (2002)
   
  85. S. Kiravittaya, Y. Nakamura, and O. G. Schmidt
  Photoluminescence linewidth narrowing of InAs/GaAs self-assembled quantum dots
  Physica E 13, 224 (2002)
   
  84. J. Maes, M. Hayne, Y. M. Manz, O. G. Schmidt, K. Eberl, and V. V. Moshchalkov
  Charge confinement and uniformity of stacked InP quantum dots studied by magneto-optical spectroscopy
  Physica E 13, 203 (2002)
   
  83. K. L. Teo, L. Qin, Z. X. Shen, and O. G. Schmidt
  Pressure-induced resonant Raman scattering in Ge/Si islands
  Applied Physics Letters 80, 2919 (2002)
   
  82. O. G. Schmidt
  Per Selbstorganisation zu Nanochips ?
  Spektrum der Wissenschaft, April 04 (2002), p. 8
   
  81. H. Heidemeyer, S. Kiravittaya, C. Müller, N. Y. Jin-Phillipp, and O. G. Schmidt
  Closely stacked InAs/GaAs quantum dots grown at low growth rate
  Applied Physics Letters 80, 1544 (2002)
   
  80. M. W. Dashiell, U. Denker, C. Müller,, G. Costantini, C. Manzano, K. Kern, and O. G. Schmidt
  Photoluminescence of ultrasmall Ge quantum dots grown by molecular beam epitaxy at low temperatures
  Applied Physics Letters 80, 1279 (2002)
   
  79. U. Denker, M. W. Dashiell, N. Y. Jin-Phillipp and O. G. Schmidt
  Trenches around and between self assembled silicon/germanium islands grown on silicon substrates investigated by atomic force microscopy
  Materials Science and Engineering B 89, 166 (2002)
   
 78. M. W. Dashiell, C. Müller, N. Y. Jin-Phillipp, U. Denker, O. G. Schmidt and K. Eberl
  Low temperature epitaxial growth of germanium islands in active regions of silicon interband tunneling diodes
  Materials Science and Engineering B 89, 106 (2002)
   
  77. O. G. Schmidt, U. Denker, M. Dashiell, N. Y. Jin-Phillipp, K. Eberl, R. Schreiner, H. Gräbeldinger, H. Schweizer, S. Christiansen and F. Ernst
  Laterally aligned Ge/Si islands: A new concept for faster field-effect transistors
  Materials Science and Engineering B 89, 101 (2002)
   
  76. M. Cazayous, J. Groenen, J. R. Huntzinger, A. Mlayah, U. Denker and O. G. Schmidt
  A new tool for measuring island dimensions and spatial correlations in quantum dot multilayers: Raman scattering interferences
  Materials Science and Engineering B 88, 173 (2002)
   
  75. O. G. Schmidt, C. Deneke, N. Schmarje, C. Müller, and N. Y. Jin-Phillipp
  Free-standing semiconductor micro- and nano-objects
  Materials Science and Engineering C 19, 393 (2002)