2005
   
 165. Z. Zhong, G. Katsaros, M. Stoffel, G. Costantini, K. Kern, O. G. Schmidt, N. Y. Jin-Phillipp, and G. Bauer
  Periodic pillar structures formed by selective etching of Si from multilayer GeSi islands grown on patterned Si substrate
  Applied Physics Letters 87, 263102 (2005)
   
 164. S. Kiravittaya, A. Rastelli, and O. G. Schmidt
  Self-assembled InAs quantum dots on patterned GaAs(001) substrates: Formation and shape evolution
  Applied Physics Letters 87, 243112 (2005)
   
 163. M. Stoffel, G. S. Kar, and O. G. Schmidt
  Ge rich Esaki diodes with high peak to valley current ratios
  Materials Science and Engineering C 25, 826 (2005)
   
 162. M. Stoffel, A. Rastelli, S. Kiravittaya, and O. G. Schmidt
  Strain-mediated lateral SiGe island motion in single and stacked layers
  Physical Review B 72, 205411 (2005)
   
 161. G. Katsaros, G. Costantini, M. Stoffel, R. Esteban, A. M. Bittner, A. Rastelli, U. Denker, O. G. Schmidt, and K. Kern
  Kinetic origin of island intermixing during the growth of Ge on Si(001)
  Physical Review B 72, 195320 (2005)
   
 160. A. Malachias, T. U. Schülli, G. Medeiros-Ribeiro, L. G. Cancado, M. Stoffel, O. G. Schmidt, T. H. Metzger, and R. Magalhaes-Paniago
  X-ray study of atomic ordering in self-assembled Ge islands grown on Si(001)
  Physical Review B 72, 165315 (2005)
   
 159. Z. Zhong, O. G. Schmidt, and G. Bauer
  Increase of island density via formation of secondary islands on pit-patterned Si(001) substrates
  Applied Physics Letters 87, 133111 (2005)
   
 158. N. Schildermans, M. Hayne, V. V. Moshalkov, A. Rastelli, and O. G. Schmidt
  Nonparabolic band effects in GaAs/AlGaAs quantum dots and ultra-thin quantum wells
  Physical Review B 72, 115312 (2005)
   
 157. U. Denker, D. E. Jesson, M. Stoffel, A. Rastelli, and O. G. Schmidt
  Investigating the evolution of dislocated SiGe islands by selective wet-chemical etching
  Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors – ICPS- 27, AIP Conference Proceedings 772, 599 (2005)
   
 156. B. Krause, T. H. Metzger, A. Rastelli, R. Songmuang, S. Kiravittaya, and O. G. Schmidt
  Shape, strain, and ordering of lateral quantum dot molecules
  Physical Review B 72, 085339 (2005)
   
 155. A. Rastelli, M. Stoffel, J. Tersoff, G. S. Kar, and O. G. Schmidt
  Kinetic evolution and equilibrium morphology of strained islands
  Physical Review Letters 95, 026103 (2005)
   
 154. S. Kiravittaya and O. G. Schmidt
  Lateral quantum dot replication in three-dimensional quantum dot crystals
  Applied Physics Letters 86, 263113 (2005)
   
 153. U. Denker, A. Rastelli, M. Stoffel, J. Tersoff, G. Katsaros, G. Costantini, K. Kern, N. Y. Jin- Phillipp,  D. E. Jesson, and O. G. Schmidt
  Lateral motion of SiGe islands driven by surface mediated alloying
  Physical Review Letters 94, 216103 (2005)
   
152. S. Kiravittaya and O. G. Schmidt
  Comment on “A growth pathway for highly ordered quantum dot arrays”[Appl. Phys. Lett. 85, 5974 (2004)]
  Applied Physics Letters 86, 206101 (2005)
   
 151. F. Marabelli, A. Rastelli, O. G. Schmidt, G. Beaurin, M. Geddo, and G. Guizzetti
  Optical characterization of hierarchically self-assembled GaAs/AlGaAs quantum dots
  Proceedings of the Materials Research Society Symposium, Progress in Compound Semiconductor Materials IV - Electronic and Optoelectronic Applications 829, 43 (2005)
   
 150. J. Novak, V. Holy, J. Stangl, G. Bauer, E. Wintersberger, S. Kiravittaya, and O. G. Schmidt
  A method for characterization of strain fields in buried quantum dots using x-ray standing waves
  Journal of Physics D: Applied Physics 38, A137 (2005)
   
 149. G. Costantini, A. Rastelli, C. Manzano, P. Acosta-Diaz, G. Katsaros, R. Songmuang, O. G. Schmidt, H. v. Känel, and K. Kern
  Pyramids and domes in the InAs/GaAs(001) and Ge/Si(001) systems
  Journal of Crystal Growth 278, 38 (2005)
   
 148. D. N. Lobanov, A. V. Novikov, N. V. Vostokov, Y. N. Drozdov, A. N. Yablonskiy, Z. F. Krasilnik, M. Stoffel, U. Denker, and O. G. Schmidt
  Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer
  Optical Materials 27, 818 (2005)
   
 147. N. V. Vostokov, Y. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, A. N. Yablonskii, M. Stoffel, U. Denker, O. G. Schmidt, O. M. Gorbenko, and I. P. Soshnikov
  Influence of a predeposited Si1-xGex layer on the growth of self-assembled SiGe/Si(001) islands
  Physics of the Solid State 47, 26 (2005)
   
 146. T. U. Schülli, M. Stoffel, A. Hesse, J. Stangl, R. T. Lechner, E. Wintersberger, M. Sztucki, T. H. Metzger, O. G. Schmidt, and G. Bauer
  Influence of growth temperature on interdiffusion in uncapped SiGe islands on Si (001) determined by anomalous x-ray diffraction and reciprocal space mapping
  Physical Review B 71, 035326 (2005)