Dr. Yongheng Huo

Department:IIN - Strained Nanoarchitectures
Address:IFW Dresden
Helmholtzstraße 20
01069 Dresden
Telephone number:+49-351-4659-notset

Journal papers:2

Journal papers


Y. H. Huo, A. Rastelli, and O. G. Schmidt
Ultra-small excitonic fine structure splitting in highly symmetric quantum dots on GaAs (001) substrate
Appl. Phys. Lett. 102, 152105 (2013) URL

Journal papers


J. Zhang, Y. Huo, A. Rastelli, M. Zopf, B. Hoefer, Y. Chen, F. Ding, O.G. Schmidt: Single photons on-demand from light-hole excitons in strain-engineered quantum dots, Nano Letters 15 (2015), S. 422-427 URL


M. Baudisch, M. Wagner, H. Schneider, D. Stehr, M. Helm, P. Atkinson, Y. Huo, O.G. Schmidt, A.M. Andrews, G. Strasser: Fano effect due to ponderomotive coupling in intersubband response of semiconductor quantum wells, Physical Review B 86 (2012) Nr. 7, S. 75305/1-5 URL