Low-pressure CVD

Vertically aligned CNTs grown on conductive substrates are of great interest for development novel application like supercapacitors, flat panel displays and interconnects requiring good electrical contact to the nanotube. Direct growth of CNTs on metal substrates is a great challenge due to formation of inactive alloys with catalyst nanoparticles (usually Fe, Co, or Ni) and microstructural changes of metal surface above the Tammann temperature that disallows formation of catalyst nanoclusters needed for nanotube growth. In the CVD group of the IFF, development of the synthesis techniques of aligned single- and multi-walled CNTs on various substrates are in the progress.

Scheme of developed low-pressure CCVD reactor

(Pressure: Batch conditions: 4·10^-4…1000 mbar; Flow conditions: 10…1000 mbar)

Aligned CNTs with the length a few millimeter grown on the Si substrate

Growth of aligned MWCNTs (diameter in the range of 8-15 nm and length up to 30 mkm) on the Al foils

Contacts:

Dr. Albrecht Leonhardt
Department 'Chemical Vapor Deposition'
Institute for Solid State Research (IFF)
IFW Dresden
D-01171 Dresden, Germany

Phone: +49-351-4659-299
Fax: +49-351-4659-440

Email: a.leonhardt@ifw-dresden.de

See also:

Initial page of department CVD