Gallium-assisted deoxidation of patterned substrates for site-controlled growth of InAs quantum dots
| P. Atkinson, O. G. Schmidt J. Cryst. Growth 311, 1815 (2009) URL PDF |
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| Abstract | ||
| In-situ gallium-assisted deoxidation of ex-situ patterned GaAs (100) substrates has been investigated, and compared with the more conventionally used hydrogen-assisted deoxidation. A total of 6–8 ML of gallium supplied at a substrate temperature of 420–460°C has been shown to remove the surface oxide without significantly damaging shallow electron-beam patterned holes. These holes, 20 nm deep and 100 nm wide, have then been successfully used to control the nucleation site of single InAs quantum dots. |