Microcavity enhanced silicon light emitting pn-diode
| J. Potfajova, B. Schmidt, M. Helm, T. Gemming, M. Benyoucef, A. Rastelli, O. G. Schmidt Appl. Phys. Lett. 96, 151113 (2010) URL PDF |
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| Abstract | ||
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An electrically driven silicon light emitting diode with two distributed Bragg reflectors is reported. The active material is a Si pn-junction fabricated by boron ion implantation into an n-type silicon-on-insulator wafer. The cavity with a thickness of a few wavelengths is formed by amorphous Si/SiO2 multilayer stacks. A strong narrowing and enhancement of the electroluminescence at a resonant wavelength of λ = 1146 nm is observed with a quality factor of Q = 143 and a finesse of F = 11. |