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Nano-sized light emitting diodes by near field laser exposure

  F. Intonti, V. Matarazzo, A. Nasir, O. Makarovsky, R. Campion, A. Patanè, S. Kumar, A. Rastelli, O. G. Schmidt, M. Gurioli
Appl. Phys. Lett. 98, 183102 (2011) URL PDF
  Abstract
  We report a postfabrication process for the realization of nanosized light emitting diodes. The method is based on the exposure of the device to an Ar+ laser through an aperture near field optical microscope and can produce a large (>100 fold) increase in the electroluminescence within a near field hot spot as small as 440 nm. A study of morphological, photoluminescence and electroluminescence properties highlights the interplay between oxidation, annealing, and ablation processes for various laser exposure conditions.

 

 

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