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Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules

  V. Křápek, P. Klenovský, A. Rastelli, O. G. Schmidt, D. Munzar
J. Phys. Conf. Ser. 245, 012027 (2010) URL PDF
  Abstract
  We calculate the excitonic structure of pairs of GaAs/AlGaAs quantum dots forming lateral molecules and obtain the entanglement of exciton states. The following advantages of the lateral geometry over the vertical one are found: (1) The energy structures of the dots forming a molecule can be in principle identical. (2) Comparable tunneling of electrons and holes ensures a high entanglement of antisymmetric excitons. A drawback of existing structures are very low tunneling energies, which make the entanglement vulnerable against differences in the sizes and shapes of both dots.

 

 

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IFW Dresden
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