Sections
Personal tools

Transport and magnetic properties of Fe3Si epitaxial films

  H. Vinzelberg, J. Schumann, D. Elefant, E. Arushanov, O. G. Schmidt
J. Appl. Phys. 104, 093707 (2008) URL PDF
 
  Abstract  
  The paper presents resistivity and magnetization measurements on nearly stoichiometric Fe3Si films epitaxially grown on GaAs substrates by electron-beam evaporation in an ultrahigh vacuum chamber. In the low-temperature resistivity a T3 term was found in all samples. A term like that is known to describe the anomalous single-magnon scattering processes in half-metallic materials and confirms so for our samples the hypothesis of half-metallic ferromagnetism in Fe3Si. The films show an anisotropic magnetoresistance in low magnetic fields. In high magnetic fields a negative longitudinal and transverse magnetoresistance (MR) has been observed linearly depending on the field strength. In the vicinity of 200 K the MR shows maximum absolute values up to 1.5% at magnetic fields of about 8 T. From the magnetization measurements a magnetic moment of 0.86µB/atom was obtained, which is close to that of bulk Fe3Si.  
     
 
 
Director
Prof. Dr. Oliver G. Schmidt
IFW Dresden
Postfach 27 01 16
D-01171 Dresden

 

Contact:  
Sekretariat
Ulrike Steere
Phone: +49 351 4659 810
Fax: +49 351 4659 782