Responsible: Dr. Stefan Harazim
Substitute: Dr. Jens Ingolf Mönch
Technical staff: Martin Bauer (673), Barbara Eichler (672), Sebastian Seifert (168), Sandra Sieber (672)
Dry Etching Tools:
- Reactive Ion Etching (FHR)
- Ion Beam Etching (Roth & Rau)
- Plasma Reactors (Diener&Secon)
- Optical contact mask aligners MA6, MA56 & MJB4 (Suss)
- Maskless Laser Lithography uPG (HIMT) Installation 2012
- Laser Lithographic Mask Writer DWL66 (HIMT)
- Electron Beam Lithography (Hitachi + Raith)
- Electron Beam Co-Evaporation System
- Magnetron Sputter Epitaxy
- Atomic Layer Deposition Savannah100 (Cambridge NanoTech)
- Evaporation System MEB 550 S (Plassys) Installation 2012
- Programmable High-Precision Hotplates (Gestigkeit)
- HF etching facility
- Wedge and Membrane Bonding machine
- Substrate sawing machine
- GaAs scriber
- Probe Station PSM6 (Suss)
- Optical microscopes (Olympus)
- Atomic Force Microscope DI3100 (Bruker)
- ProfilometerDektakXT (Bruker)
Dry Etching Tools
Reactive Ion Etching facility (FHR)
For the fabrication of many electronic devices, selective etching of semiconducting material is needed. Controlled dry-etching of the active structure such as carbon nanotubes, graphene, silicon and GaAs nanowires as well as semiconducting heterostructured nanomembranes and topological insulators is mandatory for patterning as well as device isolation. The system has two reaction chambers for chlorine (Cl2 and BCl3) as well as fluorine (SF6, CHF3, CF4) chemistry with attached inductive coupled plasma and end-point detection. Furthermore the system offers He, H, N2 and O2 as reaction gases.
Ion Beam Etching (Roth & Rau)
This tool uses a Argon ion beam which is directed onto the sample. The etching is of physical nature and thus able to etch nearly most materials.
Low pressure plasma system Femto (Diener)
This system is used in the fabrication route of microengineered devices to either clean, etch or activate surfaces in a O2 plasma. Up to 100W and long plasma times can be employed.
Plasma Reactor XPC-500 (Secon)
This tool offers a more chemical etching due to the separation of the plasma from the specimen. N2, O2 and CF4 can be used.
Optical contact mask aligners
MA6 & MA56
Standard optical contact lithography equipped with ultraviolet light with adjustable Hg spectral lines (254-435nm)
Installation June 2012
Laser Lithographic Mask Writer DWL66
The DWL 66 laser lithography system is an high resolution pattern generator for low volume mask making and direct writing. The capabilities and flexibility of this system make it the ultimate lithographic research tool in many applications that require microstructures.
Maskless Laser Lithography uPg 501
Installation August 2012
Maskless lithography tool to pattern substrates (5-100mm) with sub-micron structures and sub-micron alignment precision.
Electron Beam Lithography System
Electron beam lithography system equipped with a high-precision laser interferometer stage.
Probe Station PSM6
3 Optical microscopes
High quality objectives and equipped with extended focus depth and stitching possibility
Atomic Force Microscope DI3100
The atomic force microscopy (AFM) is a versatile tool for characterization and manipulation at the nanoscale. The available AFM, equipped with a Nanoscope V controller is used, among others, for surface topography measurements, nanostructuring, and local thermal analyis.
Profilometer Dektak XT
Profilometer for measuring three-dimensional profiles of the sample surface.
Magnetron Sputter Epitaxy
Magnetron sputter epitaxy equipped with confocal and facing target sputtering systems for the preparation of undoped and doped Si/Ge multiquantum well layered systems.
Sputtering and Evaporation Module
Combined ultra-high vacuum sputtering and evaporation module for the preparation of layered systems with metallic, semiconducting and insulating components by means of DC and RF sputtering and electron beam evaporation.
Atomic Layer Deposition Savannah 100
This atomic layer deposition system equipped with special, high-speed, pneumatic pulse valves to enable our unique Exposure Mode™ for deposition on Ultra High Aspect Ratio substrates. Exposure mode has been used to deposit conformal, uniform films on substrates with aspect ratios of greater than 2000:1. Currently, this system is used to deposit thin layers of aluminium oxide, titanium oxide, zinc oxide and hafnium oxide