Major Equipment



CrossBeam Workstation NVision40 The NVision 40 technology is comprising GEMINI® electron-beam column with two in-lens detector systems for ultra high resolution imaging. The two detectors can be operated simultaneously for the detection of secondary and backscattered electrons at highest detection efficiencies even at short working distances and ultra-low beam voltages. We use this machine to prepare highly polished transmission electron microscopy (TEM) lamellas.		Scanning Electron Microscope DSM 982 Gemini ZEISS Digital Scanning Electron Microscope is a cold field emission electron microscope oriented towards high resolution imaging (1-2 nm resolutions). It comprises also GEMINI® electron-beam column. This scanning electron microscope enable high resolution imaging of surfaces of all kind of materials.
Contact Person: Dr. Stefan Baunack		Contact Person: Dr. Stefan Baunack



Atomic Force Microscope Nanoscope IIIa The instrument is essentially an extremely high resolution profilometer. A sharp silicon nitride or silicon tip is scanned across the surface of a sample and the position of the tip on the sample surface is controlled by three piezoelectric ceramics. The computer is used to monitor the position of the tip via the signal form a photodiode which receives reflected laser light from the top of the tip support. Two dimensional scans allow the construction of images of the sample surface. The instrument is capable of imaging areas as large as 100x100 µm² and as small as a few tens of nanometers square. We usually use this equipment for imaging surface of semiconductor nanostructures e.g. self-assembled quantum dots.		Molecular Beam Epitaxy Balzer SiGe MBE This molecular beam epitaxy system equipped with several effusion cells, ultrahigh vacuum pumps, in situ monitoring system. The machine is designed for deposition of Si, Ge, and B film with atomic layer precision.
Contact Person: Dr. Armando Rastelli		Contact Person: Dr. Jianjun Zhang, Peixuan Chen



Molecular Beam Epitaxy Omicron III-V MBE This III-V molecular beam epitaxy system is connected to a transfer line, which allows samples to be transferred into other machines without breaking the vacuum. The machine equipped with several effusion cells, ultrahigh vacuum pumps and a few in situ monitoring system. Typical samples produce by this machine are layers of binary (GaAs, AlAs, InAs) and ternary (InGaAs and AlGaAs) compounds. Self-assembled InAs and GaAs quantum dots can also be grown in this machine.		AsBr₃ in-situ etching gas system MBE Komponent The AsBr₃ gas line is directly connected to the growth chamber of III-V molecular beam epitaxy machine. This allows us to perform gas etching during growth of thin film. Applications of this system is to create a self-assembled GaAs quantum dots and InAs and GaAs quantum dot molecules.
Contact Person: Dr. Dominic J. Thurmer		Contact Person: Dr. Dominic J. Thurmer



Molecular Beam Epitaxy / Sputtering Machine for Metal Deposition The metal molecular beam epitaxy connected with sputtering system for sputtering of niobium and gold layers. The current activity of this machine is to grow high quality FeSi₃ film on GaAs substrate.		Atomic Layer Deposition Cambridge NanoTech This atomic layer deposition system equipped with special, high-speed, pneumatic pulse valves to enable our unique Exposure Mode™ for deposition on Ultra High Aspect Ratio substrates. Exposure mode has been used to deposit conformal, uniform films on substrates with aspect ratios of greater than 2000:1. Currently, we use this system to depostion thin layer of aluminium oxide, titanium oxide, zinc oxide and hafnium oxide.
Contact Person: Dr. Dominic J. Thurmer, Ronny Engelhard		Contact Person: Dr. Daniel Grimm, Stefan Harazim



Sputtering Machine B2 Two magneton sources for DC cool sputtering of metal and magnetic materials (only conductive materials). The system equipped with a measurement setup for observing stress evolution during the film growth and sample for this machine is a stripe.		Sputtering Machine B8 Ultra-high vacuum sputtering machines with 8 magneton sources for sputtering of both conductive and non-conductive target materials. The system can support full 3-inch wafers.
Contact Person: Dr. Denys Makarov		Contact Person: Dr. Denys Makarov



Electron Beam Co-Evaporation System Ultra-high vacuum electron beam co-evaporation: growth of binary epitaxial silicide stacks for radial superlattice manufacturing.		Electron Beam Evaporator Edwards AUTO500 This tool is used for material evaporation by electron beam onto samples. Typically metals are deposited onto a semiconductor or glass. The water cooled workholder is capable of taking up to three 4" wafers at a time. This tool is equipped with a thickness monitor for thickness control.
Contact Person: Dr. Joachim Schumann		Contact Person: Ronny Engelhard, Dr. Samuel Sanchez Ordonez



Sputtering Machine DCA with In-Situ Analytic Tools Ultra-high vacuum sputtering machine with eight DC magneton sources for metal and magnetic materials. The system connected with an analytic chamber, where one can perform scanning tunneling microscopy, atomic force microscopy, low-energy electron diffraction and Auger. System can support full 3-inch wafer.
Contact Person: Dr. Denys Makarov



Micro-Photoluminescence Setup I Micro-photoluminescence spectroscopy is a powerful tool for investigating the optical and electronic properties of single nanostructures. The lab is equipped with a frequency doubled continuous wave Nd:YVO₄ laser (10 W power), a microscope, a variable temperature cryostat with optical access on motorized stages, a spectrometer with 500 mm focal length equipped with Si-CCD and InGaAs array detectors. It is used for studies in the visible-to-near-infrared (up to 1600 nm) spectral range and for laser microprocessing.		Micro-Photoluminescence Setup II In addition to steady-state measurements (which can be performed in Micro-PL Setup I), this setup is used for high-resolution, time-resolved and photon-correlation spectroscopy studies. A mode-locked tunable laser is available in this lab together with a double spectrometer and single-photon avalanche photodiodes.
Contact Person: Dr. Armando Rastelli, Dr. Rinaldo Trotta		Contact Person: Dr. Armando Rastelli, Dr. Rinaldo Trotta



Micro-Photoluminescence Setup III This micro-photoluminescence setup equipped with high magnetic field source. The system is currently being set up for measuring nanostructures.		Thermoelectric measurement (3-Omega) system The 3-omega system allows the measurement of cross-plane and in-plane thermal conductivity of thin film and bulk materials. In particular, this instrument enables also the measurement of the Seebeck coefficient. Remarkably ,all the measurements can be performed in a wide temperature rang, namely from 100 K to 500 K. The system is empowered by a software based on finite volume method, which allows the determination of the temperature distribution within the studied sample, finally supporting the 3-omega data reduction.
Contact Person: Dr. Armando Rastelli, Dr. Rinaldo Trotta		Contact Person: Peixuan Chen



"Cell Observer" Imaging System Zeiss "Cell Observer" is a high-end microscopy platform for complex live cell imaging applications.		Clean Bench and Incubator Clean bench and incubator for cell culturing experiment.
Contact Person: Dr. Samuel Sanchez Ordonez		Contact Person: Dr. Samuel Sanchez Ordonez



Probe Station for Transport Characteristics Four electrical + one optical arms for electrical characterization under various controlled paprameters. Optical arm is connected with a white light source (250-1200 nm) and optical spectrometer. Measurement temperature can varied between 2.5 - 350 K. Magnetic field up to 2.5 T can be applied to the sample in the prependicular direction. For DC characterization, 10 fA resolution is achivable while for AC characterization, the frequency can be varied between 100 mHz - 6 GHz. System is currently devoted for measuring hybrid organic/inorganic devices.		Atomic Force Microscope (DI Dimension 3100) The atomic force microscopy (AFM) is a versatile tool for characterization and manipulation at the nanoscale. The available AFM, equipped with a Nanoscope V controller is used, among others, for surface topography measurements, nanostructuring, and local thermal analyis.
Contact Person: Dr. Carlos Cesar Bof Bufon		Contact Person: Dr. Daniel Grimm, Dr. Armando Rastelli



Magnetron Sputter Epitaxy Magnetron sputter epitaxy equipped with confocal and facing target sputtering systems for the preparation of undoped and doped Si/Ge multiquantum well layered systems.		Sputtering and Evaporation Module Combined ultra-high vacuum sputtering and evaporation module for the preparation of layered systems with metallic, semiconducting and insulating components by means of DC and RF sputtering and electron beam evaporation.
Contact Person: Dr. Joachim Schumann		Contact Person: Dr. Joachim Schumann



Profilometer VeeCo DEKTAK Profilometer for measuring one dimensional profile of sample surface.		Optical Lithography System Karl Suss Standard optical lithography.
Contact Person: Dr. Daniel Grimm, Dr. Dominic J. Thurmer		Contact Person: Dr. Daniel Grimm, Dr. Dominic J. Thurmer



Laser Writing Lithography System Heidelberg Instruments DWL 66 The DWL 66 laser lithography system is an high resolution pattern generator for low volume mask making and direct writing. The capabilities and flexibility of this system make it the ultimate lithographic research tool in many applications that require microstructures.		Electron Beam Lithography System Electron beam lithography system
Contact Person: Dr. Daniel Grimm, Dr. Dominic J. Thurmer		Contact Person:Dr. Daniel Grimm, Dr. Jens Ingolf Mönch



Impedance Measurement Unit Impedance measurement unit (Zahner-elektrik IM6) equipped with a programmable potentiostat, a pair of high precision amplifiers for current and potential, a flexible frequency generator/analyzer and four slots for additional input and output modules. It can be used for spectrum analysis in the electrochemical field.		Battery Testing System Battery testing system (Arbin Instruments' BT-2000) is a multiple independant-channel testing system, and each channel operates independently of the others. We can use BT-2000 to test the discharge/charge capabilities of batteries (both rechargeable and primary battery) and electrochemical capacitors.
Contact Person: Dr. Yan Chenglin		Contact Person: Dr. Yan Chenglin



UV/Visible micro-PL/Raman system (InVia, Renishaw) InVia PL/Raman microscopes are high-sensitivity systems with integrated research grade microscopes, enabling high resolution (50x) confocal measurements. It can multiple lasers, with automatic software switching of excitation wavelength. Currently, we use this system for measuring thin membranes of semiconductor and carbon-related materials.		Microscale Optic Lab This optic lab is designed for measurement of transmission and reflection properties of micro- and nanostructures. The lab equipped with white lamp with tunable wavelength in visible range. Signal is collected by an objective lens to charged coupled device via optical fiber.
Contact Person: Vladimir Bolanos, Dr. Suwit Kiravittaya		Contact Person: Elliot John Smith, Dr. Suwit Kiravittaya



Portable Electrochemical Workstation The portable electrochemical workstation and battery test line is a system used for performing electrochemical experiments including charge and discharge a battery.		Portable Precision Semiconductor Parameter Analyzer Agilent 4156C The Agilent 4156C is an accurate laboratory bench top solution for device characterizations. The system is equipped with Test Fixture 16442B and a computer is used to control the measurement process.
Contact Person: Dr. Yan Chenglin		Contact Person: Dr. Samuel Sanchez Ordonez



Microscope I in Chemical Lab This optical microscope equiped with a micro-manipulator, which is controlled via piezoelectric ceramic. System can capture video image to the computer. In situ real-time monitoring of chemical phenomena occurred in microscale can be observed by this system.		Microscope II in Chemical Lab This conventional optical microscope is equipped with a camera and allow us to quick observation during lab work.
Contact Person: Dr. Samuel Sanchez Ordonez		Contact Person: Dr. Samuel Sanchez Ordonez


High Temperature Oven Näbertherm High temperature oven (up to 1200°C) used for annealing semiconductor sample in flowing gas (N₂, Ar, O₂) environment.		Low pressure plasma system Femto (Diener) This system is used in the fabrication route of microengineered devices to either clean, etch or activate surfaces in a O2 plasma. Up to 100W and long plasma times can be employed.
Contact Person: Dr. Samuel Sanchez Ordonez		Contact Person: Dr. Daniel Grimm


COMSOL Multiphysics Finite-element based partial differential equations solvers with structural mechanics and radio-frequency (RF) modules.		Plasma Reactor XPC-500 (Secon) This tool offers a more chemical etching due to the separation of the plasma from the specimen. N2, O2 and CF4 can be used.
Contact Person: Dr. Suwit Kiravittaya		Contact Person: Dr. Daniel Grimm


Reactive Ion Etching facility (FHR) For the fabrication of many electronic devices, selective etching of semiconducting material is needed. Controlled dry-etching of the active structure such as carbon nanotubes, graphene, silicon and GaAs nanowires as well as semiconducting heterostructured nanomembranes and topological insulators is mandatory for patterning as well as device isolation. The system has two reaction chambers for chlorine (Cl2 and BCl3) as well as fluorine (SF6, CHF3, CF4) chemistry with attached inductive coupled plasma and end-point detection. Furthermore the system offers He, H, N2 and O2 as reaction gases.		Ion Beam Etching (Roth & Rau) This tool uses a Argon ion beam which is directed onto the sample. The etching is of physical nature and thus able to etch nearly most materials.
Contact Person: Dr. Daniel Grimm		Contact Person: Dr. Daniel Grimm

Sections

Personal tools

Major Equipment

CrossBeam Workstation NVision40

Scanning Electron Microscope DSM 982 Gemini

Atomic Force Microscope Nanoscope IIIa

Molecular Beam Epitaxy Balzer SiGe MBE

Molecular Beam Epitaxy Omicron III-V MBE

AsBr3 in-situ etching gas system MBE Komponent

Molecular Beam Epitaxy / Sputtering Machine for Metal Deposition

Atomic Layer Deposition Cambridge NanoTech

Sputtering Machine B2

Sputtering Machine B8

Electron Beam Co-Evaporation System

Electron Beam Evaporator Edwards AUTO500

Sputtering Machine DCA with In-Situ Analytic Tools

Micro-Photoluminescence Setup I

Micro-Photoluminescence Setup II

Micro-Photoluminescence Setup III

Thermoelectric measurement (3-Omega) system

"Cell Observer" Imaging System Zeiss

Clean Bench and Incubator

Probe Station for Transport Characteristics

Atomic Force Microscope (DI Dimension 3100)

Magnetron Sputter Epitaxy

Sputtering and Evaporation Module

Profilometer VeeCo DEKTAK

Optical Lithography System Karl Suss

Laser Writing Lithography System Heidelberg Instruments DWL 66

Electron Beam Lithography System

Impedance Measurement Unit

Battery Testing System

UV/Visible micro-PL/Raman system (InVia, Renishaw)

Microscale Optic Lab

Portable Electrochemical Workstation

Portable Precision Semiconductor Parameter Analyzer Agilent 4156C

Microscope I in Chemical Lab

Microscope II in Chemical Lab

High Temperature Oven Näbertherm

COMSOL Multiphysics

Plasma Reactor XPC-500 (Secon)This tool offers a more chemical etching due to the separation of the plasma from the specimen. N2, O2 and CF4 can be used.

AsBr₃ in-situ etching gas system MBE Komponent

Plasma Reactor XPC-500 (Secon)

This tool offers a more chemical etching due to the separation of the plasma from the specimen. N2, O2 and CF4 can be used.