Quantum Materials and Devices
Our group uses deposition techniques such as atomic layer deposition, (magnetron) sputtering and sputter etching to prepare thin films and thin film stacks. After in-situ characterization, the layer stacks are further processed by lithography to receive spinelectronic or memristive devices. In additon to thin film devices, our main interest is semiconductor nanowires. Here, the 3-d conformity of atomic layer deposition can be used to prepare sophisticated nanowires and related devices. The scientific focus of our group is layered materials, topological insulators, correlated oxides and their use in suitable devices.
- Z. Jin, A. Tkach, F. Casper, V. Spetter, H. Grimm, A. Thomas, T. Kampfrath, M. Bonn, M. Kläui & D. Turchinovich: Accessing the fundamentals of magnetotransport in metals with terahertz probes, Nature Phys. (2015) doi:10.1038/nphys3384
- J. Gooth, J. G. Gluschke, R. Zierold, M. Leijnse, H. Linke, and K. Nielsch, Thermoelectric performance of classical topological insulator nanowires, Semicond. Sci. Tech. 30 (2015) 015015
- A. Thomas, S. Niehörster, S. Fabretti, N.Shepheard, O. Kuschel, K. Küpper, J. Wollschläger, P. Krzysteczko and E. Chicca: Tunnel junction based memristors as artificial synapses, Front. Neurosci. 9 (2015) 241
- J. Gooth, B. Hamdou, A. Dorn, R. Zierold, and K. Nielsch, Resolving the Dirac cone on the surface of Bi2Te3 topological insulator nanowires by field-effect measurements, Appl. Phys. Lett. 104 (2014) 243115
- S. Fabretti, R. Zierold, K. Nielsch, C. Voigt, C. Ronning, P. Peretzki, M . Seibt, A. Thomas: Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions, Appl. Phys. Lett. 105 (2014) 132405
- B. Hamdou, A. Beckstedt, J. Kimling, A. Dorn, L. Akinsinde, S. Bäßler, E. Pippel, and K. Nielsch, The influence of a Te-depleted surface on the thermoelectric transport properties of Bi2Te3 nanowires, Nanotech. 25 (2014) 365401