20. O. G. Schmidt, C. Lange, K. Eberl, O. Kienzle, and F. Ernst
  C-induced Ge dots: A versatile tool to fabricate ultra-small Ge nanostructures
  Thin Solid Films 336, 248 (1998)
 19. N. L. Rowell, R. L. Williams, G. C. Aers, H. Lafontaine, D. C. Houghten, K. Brunner, K. Eberl, O. Schmidt, and W. Winter
  Band alignment of SiGe and SiGeC quantum wells on Si (001)
  Material Research Symposium Proceedings 533, 235 (1998)
 18. O. G. Schmidt, K. Eberl, S. Schieker, N. Y. Jin-Phillipp, F. Phillipp, J. Auerswald and P. Lamperter
  Stacked layers of C-induced Ge quantum dots
  Material Research Symposium Proceedings 533, 171 (1998)
 17. O. G. Schmidt and K. Eberl
  Photoluminescence and band edge alignment of C-induced Ge islands and related SiGeC structures
  Applied Physics Letters 73, 2790 (1998)
 16. O. G. Schmidt, S. Schieker, K. Eberl, O. Kienzle, and F. Ernst
  Carbon-Induced Ge dots: Kinetically limited islanding process prevents coherent vertical alignment
  Applied Physics Letters 73, 659 (1998)
 15. K. Brunner, O. G. Schmidt, W. Winter, K. Eberl,  M. Glück, and U. König
  SiGeC: Bandgap, bandoffsets, optical properties and potential applications
  Journal of Vacuum Science and Technology B 16, 1701 (1998)
 14. G. Wöhl, C. Schöllhorn, O. G. Schmidt, K. Brunner, K. Eberl, and O. Kienzle
  Characterization of self-assembled Ge islands on Si (100) by atomic force microscopy and transmission electron microscopy
  Thin Solid Films 321, 86 (1998)
 13. O. G. Schmidt, C. Lange, K. Eberl, O. Kienzle, and F. Ernst
  Influence of pre-grown carbon on the formation of germanium dots
  Thin Solid Films 321, 70 (1998).
 12. K. Eberl, O. G. Schmidt, S. Schieker, N.Y. Jin-Phillipp and F. Phillipp
  Formation and optical properties of carbon-induced Ge dots
  Solid State Electonics 42, 1593 (1998)
 11. S. Schieker, O. G. Schmidt, K. Eberl, N. Y. Jin-Phillipp, and F. Phillipp
  Annealing effects on carbon-induced germanium dots in silicon
  Applied Physics Letters 72, 3344 (1998)
 10. O. G. Schmidt and K. Eberl
  Photoluminescence of tensile-strained, exactly strain compensated and compressively strained Si1-x-yGexCy layers on Si
  Physical Review Letters 80, 3396 (1998)