Molecular beam epitaxy
Responsible: Dr. Fei Ding
Substitute: Ronny Engelhard, Robert Keil
This III-V molecular beam epitaxy system is connected to a transfer line backbone, which allows samples to be transferred into other machines without breaking the vacuum. The machine equipped with several effusion cells, ultrahigh vacuum pumps and a few in-situ monitoring system. Typical samples produce by this machine are layers of binary (GaAs, AlAs, InAs) and ternary (InGaAs and AlGaAs) compounds. Self-assembled InAs and GaAs quantum dots can also be grown in this machine. Silicon (n) and carbon (p) high temperature doping cells are available. AsBr etching is also possible.
A compact MBE using 1” samples. Can be used to fabricate novel III-V semiconductor heterostructures. Still under construction.
This molecular beam epitaxy system equipped with several effusion cells, ultrahigh vacuum pumps, in-situ monitoring system. The machine is designed for deposition of Si, Ge, and B film with atomic layer precision.
The instrument is essentially an extremely high resolution profilometer. A sharp silicon nitride or silicon tip is scanned across the surface of a sample and the position of the tip on the sample surface is controlled by three piezoelectric ceramics. The computer is used to monitor the position of the tip via the signal form a photodiode which receives reflected laser light from the top of the tip support. Two dimensional scans allow the construction of images of the sample surface. The instrument is capable of imaging areas as large as 100x100 µm2 and as small as a few tens of nanometers square. We usually use this equipment for imaging surface of semiconductor nanostructures e.g. self-assembled quantum dots.
The metal / oxide molecular beam epitaxy machine connected with sputtering system for deposition of metallic layers or oxides, by DC / RF plasma. The possibilities of this device is to grow high quality mono crystalline metal films on GaAs or Si substrates. Also possible are high quality crystalline oxide layers (with O2-background) for different kind of experiments.
The AsBr3 gas line is directly connected to the growth chamber of III-V molecular beam epitaxy machine. This allows us to perform gas etching during growth of thin film. Applications of this system is to create a self-assembled GaAs quantum dots and InAs and GaAs quantum dot molecules.
An Argon filled glove box is directly connected to the MBE transfer-line backbone. Samples can be prepared in various ways inside the glovebox (including etching, resist stripping, etc) and transferred directly into the MBE chambers.