Silicon Carbide Nanowires

(A, B) SEM micrographs of SiC nanowires. (C) Bright field TEM microgram of SiC nanowire. Stacking faults are clearly visible. (D) HAADF micrograph of SiC nanowire showing stacking faults. (E) TEM image of nanowire. Inset: diffraction pattern (2H polytype) from circled region.

(A) Schematic illustrating the substitution of Si by H in SiC. (B) Schematic showing the various diffusion pathways for the H, C and Si.

M.H. Ruemmeli, D.B. Adebimpe, E. Borowiak-Palen, T. Gemming, P. Ayala, N. Ioannides, T. Pichler, A. Huczko, S. Cudzilo, M. Knupfer, B. Buechner
Hydrogen activated axial inter-conversion in SiC nanowires, Journal of Solid State Chemistry 182 (2009) Nr. 3, S. 602-607 URL

M.H. Ruemmeli, E. Borowiak-Palen, T. Gemming, M. Knupfer, K. Biedermann, R.J. Kalenczuk, T. PichlerOn the formation process of silicon carbide nanophases via hydrogenated thermally induced templated synthesis, Applied Physics A 80 (2005) Nr. 8, S. 1653-1656  

M. Ruemmeli, E. Borowiak-Palen, T. Gemming, A. Huczko, M. Knupfer, S. Cudzilo, R.J. Kalenczuk, T. Pichler
Modification of SiC based nanorods via a hydrogenated annealing process, Synthetic Metals 153 (2005) Nr. 1-3, S. 349-352 URL

E. Borowiak-Palen, M.H. Ruemmeli, T. Gemming, M. Knupfer, K. Biedermann, A. Leonhardt, T. Pichler, R.J. Kalenczuk
Bulk synthesis of carbon-filled silicon carbide nanotubes with a narrow diameter distribution, Journal of Applied Physics 97 (2005) Nr. 5, S. 56102/1-3 URL




Prof. Dr. Mark H. Rümmeli

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