Close-up of a technical device with multiple blue cylinders connected by white tubes labeled 'ALD'


Research NTFM

The NTFM Group pioneers the atomic-scale design of functional thin films and 2D heterostructures through innovative synthesis, precision deposition, and advanced metrology. Their work spans superconducting nanocrystals, strain-resilient van der Waals heterostructures, high-k dielectrics, and multifunctional nanocomposites—enabling breakthroughs in flexible electronics, quantum devices, and sustainable materials.

The Nanostructured Thin Film Materials (NTFM) group pursues a materials-by-design approach to engineer nanoscale functional systems through atomic-layer processing and chemical vapor deposition (CVD) techniques, including Metal-Organic CVD (MOCVD), Atomic Layer Deposition (ALD), and Area-Selective Deposition (ASD). Our research centers on the chemistry of thin-film growth, interface engineering, and phase control to tailor the electrical, optical, mechanical, and quantum properties of metal oxides, nitrides, sulfides, and 2D materials.

We specialize in the bottom-up synthesis of phase-pure 2D nanocrystals (e.g., 3R-TaSe₂, NbS₂), strain-resilient van der Waals heterostructures (e.g., CrCl₃/MoS₂), and multifunctional nanocomposites (e.g., MXene/aramid films) with applications in flexible electronics, quantum devices, EMI shielding, and advanced semiconductors.

By integrating in-situ and advanced ex-situ characterization (neutron scattering, electron microscopy, XPS), we uncover emergent phenomena such as superconductivity, anisotropic lattice dynamics, and surface reactivity.

We collaborate closely with universities, research institutes, chemical suppliers, and equipment manufacturers to develop novel precursors, validate scalable processes, and accelerate the transition from lab to industry.

Mission: To engineer next-generation functional nanomaterials through atomic-scale control of thin-film growth, interface design, and phase engineering — bridging fundamental science and scalable technology for electronics, quantum devices, and sustainable materials.

ALD and MOCVD Competence Center

The aim of this initiative is to enable large-scale processing of advanced functional materials at the atomic level for future nanotechnologies. Therefore, the Competence Center at IFW Dresden has been upgraded with an industrial MOCVD reactor. This system enables highly precise process control, especially with newly developed precursors, greatly enhancing the institute’s materials research capabilities. In addition, a state-of-the-art atomic layer deposition (ALD) platform has been installed, providing advanced capabilities for the deposition of a wide range of material systems, including 2D materials, metals, and dielectric thin films on technologically relevant substrate sizes. The system is also compatible with custom-designed precursor compounds, creating new opportunities for process development and materials innovation. Together, these developments further strengthen the Competence Center’s role as a bridge between fundamental research and application-driven development.

Core Research Themes

1. Synthesis of 2D and van der Waals Materials

The group pioneers thermodynamically guided and bottom-up synthesis strategies for novel 2D materials and nanocrystals. Key achievements include:

  • 3R-TaSe₂ nanocrystals with tunable superconducting behavior (Nanoscale, 2026), demonstrating control over crystal phase and electronic properties.
  • 3R–NbS₂ nanocrystals grown via substrate-directed deposition, enabling precise control over orientation and morphology (Crystal Growth & Design, 2025).
  • Janus RhSeCl and 1.5D RhTeCl chalcochlorides, where lattice dynamics and anisotropic behavior are systematically studied (Inorganic Chemistry, 2026).

These works highlight a deep understanding of phase stability, nucleation kinetics, and interfacial interactions in low-dimensional systems.

2. Van der Waals Heterostructures & Interface Engineering

A major focus is on designing and integrating 2D materials into functional heterostructures with tailored electronic and magnetic properties:

  • CrCl₃/MoS₂ heterostructures synthesized with high crystallinity and strain resilience, enabling robust spintronic and valleytronic applications (Nanoscale Advances, 2025).
  • The group emphasizes interface integrity and defect control, ensuring that heterostructure performance is not compromised by strain or interdiffusion.

3. Advanced Thin Film Deposition & Process Innovation

The group develops novel precursor chemistries and deposition techniques to enable high-quality, scalable thin films:

  • MOCVD synthesis of HfS₂ thin films using tailored precursors (ACS Applied Materials & Interfaces, 2026).
  • Fluorinated β-ketoenamine precursors for HfₓZr₁₋ₓO₂ films, enabling superior dielectric performance (RSC Applied Interfaces, 2026).
  • Plasma-enhanced ALD of AlPO₄/AlPₓOᵧ with dual-source and supercycle approaches, achieving precise composition control for advanced dielectrics (Dalton Transactions, 2025).

These advances support the integration of high-k dielectrics and functional oxides into nanoscale devices.

4. Functional Nanocomposites & Multifunctional Materials

The group extends its expertise to hybrid and composite materials with enhanced performance:

  • Dual-crosslinked Ti₃C₂Tₓ MXene/aramid nanofiber films with exceptional EMI shielding, flame retardancy, and mechanical stability (Colloids and Surfaces A, 2026), ideal for aerospace and wearable electronics.
  • These materials combine electrical conductivity, thermal stability, and structural robustness, showcasing a systems-level approach to materials design.

5. Surface Science & Stability of Functional Materials

Understanding surface reactivity is critical for device reliability:

  • Surface oxidation of transition metal nitrides is studied at the atomic level, revealing degradation pathways and guiding protective strategies (J. Phys. Chem. C, 2025).
  • This work informs the design of stable, long-lived interfaces in electronic and catalytic devices.

6. Advanced Characterization & Metrology

The group integrates cutting-edge analytical techniques to probe structure, composition, and dynamics:

  • Neutron scattering and in-situ XRD are used to study lattice dynamics and phase transitions (e.g., in Rh chalcochlorides).
  • High-resolution electron microscopy, XPS, and Raman spectroscopy are routinely applied to validate synthesis outcomes and interface quality.

Scientific Impact & Applications

The NTFM Group’s work is driving innovation in:

  • Low-power and flexible electronics (via 2D materials and low-temperature TCOs)
  • Quantum materials and superconductivity (TaSe₂, NbS₂)
  • High-performance dielectrics and gate stacks (HfₓZr₁₋ₓO₂, AlPO₄)
  • EMI shielding and flame-retardant composites (MXene-based films)
  • Spintronic and valleytronic devices (CrCl₃/MoS₂ heterostructures)

With a strong emphasis on scalability, reproducibility, and industrial relevance—evidenced by work on 200 mm wafers and process optimization—the group bridges fundamental science and real-world applications.

Key Methodologies

  • Atomic Layer Deposition (ALD) & Metal-Organic CVD (MOCVD)
  • Area-Selective Deposition (ASD)
  • In-situ & ex-situ characterization: Neutron scattering, XRD, XPS, TEM, Raman
  • Computational modeling (surface reactivity, phase stability)
  • Scalable processes on 200 mm wafers

Scientific Vision

“From atoms to devices — we design materials with purpose.”
— Dr. Harish Parala, NTFM Group

Impact & Applications

  • Flexible & low-power electronics
  • Quantum materials & superconducting devices
  • High-k dielectrics for advanced semiconductors
  • EMI shielding & flame-retardant composites
  • Sustainable, low-temperature processing

Collaborative Excellence

The NTFM Group thrives on interdisciplinary collaboration with:

  • Neutron scattering experts (RÅC, Sweden)
  • Surface science & quantum materials groups (B. Büchner, M. Mertig, S. Hampel)
  • Computational materials scientists (M. Nolan)
  • Chemical suppliers & equipment manufacturers (precursor & process validation)