At the 33rd International Materials Research Congress (IMRC 2025), held in Cancún, Mexico, from August 17–21, a dedicated symposium on “Atomic Layer Deposition and Atomic Layer Etching: From Fundamentals to Emerging Technologies” highlighted the latest advances in atomic-scale materials engineering.

The event explored breakthroughs in atomic layer deposition (ALD) and atomic layer etching (ALE)—two key technologies that enable precise control of materials at the atomic scale. As the global demand for smaller, faster, and more energy-efficient devices accelerates, ALD and ALE are proving indispensable for next-generation nanotechnology, semiconductor fabrication, and advanced functional materials.

For the first time, the topic of ALD and ALE was brought to IMRC, attracting significant attention at Latin America’s largest and most prestigious materials research conference, which welcomed more than 2,000 participants. The program featured world-renowned scientists from across the globe and served as a vibrant platform for international knowledge exchange and collaboration. Among the invited speakers was Prof. Anjana Devi, while the symposium was successfully organized by Prof. Kornelius Nielsch, Dr. Amin Bahrami, and Dr. Jorge Luis Vázquez.

Contact: 
Dr. Amin Bahrami
eMail: a.bahrami[at]ifw-dresden.de

Media Contact:
Patricia Bäuchler
p.baeuchler[at]ifw-dresden.de