Atomic Layer Deposition (ALD) is a modified chemical vapor deposition (CVD) process for depositing thin films or nanoparticles with sub-nm precision in feature size. ALD is based on the sequential exposure of a substrate to gas-phase precursor molecules, which possess the unique characteristic of self-limiting surface chemistry. ALD has emerged as an important technique for thin film depositions, owing to its unique advantages including highly uniform and conformal coverage on high-aspect-ratio substrates and exquisite control of thickness at the atomic level.
Our group has been working in this area for many years and has accumulated a lot of experience. Various oxide systems, metals, transition metal dichalcogenides, and nitrides have been developed for different applications including but not limited to:
In addition, the ALD technique is applied to deposit a charge carrier manipulator layer on thermoelectric powders and protective layers or powders for Li and Na anode.
Dr. Sebastian Lehmann
Room: D 1E.13
Phone: +49 351 4659 847